IndiumV3, Main, Repository, bibRecord, 005D06

Surface analysis of spray deposited copper indium disulfide films

Identifieur interne : 005D06 ( Main/Repository ); précédent : 005D05; suivant : 005D07

Surface analysis of spray deposited copper indium disulfide films

Auteurs : RBID : Pascal:08-0462941

Descripteurs français

Pascal (Inist)
- Analyse surface, Indium, Couche mince, Cellule solaire, Pyrolyse, Spectre photoélectron RX, Microscopie force atomique, Résistivité électrique, Attaque chimique, Traitement thermique, Composition phase, Composition surface, Conductivité superficielle, Dépôt pulvérisation, Cuivre, Sulfure de cuivre, Sulfure d'indium, Oxyde d'indium, Sulfure d'hydrogène, Gravure, Propriété électrique, In, CuInS2, 6855J, 8460J, 6855N, 7325.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Atomic force microscopy, Chemical etching, Copper, Copper sulfide, Electric resistivity, Electrical properties, Etching, Heat treatments, Hydrogen sulfides, Indium, Indium oxide, Indium sulfide, Phase composition, Pyrolysis, Solar cells, Sputter deposition, Surface analysis, Surface composition, Surface conductivity, Thin films, X-ray photoelectron spectra.

Abstract

CuInS₂ films were deposited by spray pyrolysis method at 350 °C. Films were characterized by XPS, AFM and electrical resistivity. The effect of chemical etchings in KCN and (NH₄)₂S₂O₈ solutions and thermal treatment at 530 °C in flowing hydrogen sulphide on the film surface composition has been studied. Indium oxide as main secondary phase in surface region of KCN-etched films is probably responsible of high surface conductivity and failure to prepare substrate configuration solar cell. Oxygen bounded to metal is present in the film bulk revealed by Ols BE of 530.0 eV of Ar⁺ sputtered profile. Hydrogen sulfide treatment transforms indium oxide into indium sulfide. Etching in ammonium persulfate solution has found to be effective to remove conductive upper layer resulting in surface with composition Cu:In:S=28.3:22.5:49.3. According to XPS, sprayed films show phase composition grading from the film surface to depth.

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Pascal:08-0462941

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface analysis of spray deposited copper indium disulfide films</title>
<author><name sortKey="Katerski, Atanas" uniqKey="Katerski A">Atanas Katerski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<author><name sortKey="Mere, Arvo" uniqKey="Mere A">Arvo Mere</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Estonie</country>
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<author><name sortKey="Kazlauskiene, Vida" uniqKey="Kazlauskiene V">Vida Kazlauskiene</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Science and Applied Research, Vilnius University, Naugarduko Str. 24</s1>
<s2>2006 Vilnius</s2>
<s3>LTU</s3>
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<sZ>4 aut.</sZ>
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<country>Lituanie</country>
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<author><name sortKey="Miskinis, Juozas" uniqKey="Miskinis J">Juozas Miskinis</name>
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<s2>2006 Vilnius</s2>
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<author><name sortKey="Saar, Agu" uniqKey="Saar A">Agu Saar</name>
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<author><name sortKey="Matisen, Leonard" uniqKey="Matisen L">Leonard Matisen</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, University of Tartu, Riia 142</s1>
<s2>Tartu 51014</s2>
<s3>EST</s3>
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<sZ>6 aut.</sZ>
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<author><name sortKey="Kikas, Arvo" uniqKey="Kikas A">Arvo Kikas</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, University of Tartu, Riia 142</s1>
<s2>Tartu 51014</s2>
<s3>EST</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>Tartu 51014</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Krunks, Malle" uniqKey="Krunks M">Malle Krunks</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086 Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Estonie</country>
<wicri:noRegion>19086 Tallinn</wicri:noRegion>
</affiliation>
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</titleStmt>
<publicationStmt><idno type="inist">08-0462941</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0462941 INIST</idno>
<idno type="RBID">Pascal:08-0462941</idno>
<idno type="wicri:Area/Main/Corpus">006235</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term>
<term>Chemical etching</term>
<term>Copper</term>
<term>Copper sulfide</term>
<term>Electric resistivity</term>
<term>Electrical properties</term>
<term>Etching</term>
<term>Heat treatments</term>
<term>Hydrogen sulfides</term>
<term>Indium</term>
<term>Indium oxide</term>
<term>Indium sulfide</term>
<term>Phase composition</term>
<term>Pyrolysis</term>
<term>Solar cells</term>
<term>Sputter deposition</term>
<term>Surface analysis</term>
<term>Surface composition</term>
<term>Surface conductivity</term>
<term>Thin films</term>
<term>X-ray photoelectron spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Analyse surface</term>
<term>Indium</term>
<term>Couche mince</term>
<term>Cellule solaire</term>
<term>Pyrolyse</term>
<term>Spectre photoélectron RX</term>
<term>Microscopie force atomique</term>
<term>Résistivité électrique</term>
<term>Attaque chimique</term>
<term>Traitement thermique</term>
<term>Composition phase</term>
<term>Composition surface</term>
<term>Conductivité superficielle</term>
<term>Dépôt pulvérisation</term>
<term>Cuivre</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
<term>Oxyde d'indium</term>
<term>Sulfure d'hydrogène</term>
<term>Gravure</term>
<term>Propriété électrique</term>
<term>In</term>
<term>CuInS2</term>
<term>6855J</term>
<term>8460J</term>
<term>6855N</term>
<term>7325</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
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<front><div type="abstract" xml:lang="en">CuInS<sub>2</sub>
 films were deposited by spray pyrolysis method at 350 °C. Films were characterized by XPS, AFM and electrical resistivity. The effect of chemical etchings in KCN and (NH<sub>4</sub>
)<sub>2</sub>
S<sub>2</sub>
O<sub>8</sub>
 solutions and thermal treatment at 530 °C in flowing hydrogen sulphide on the film surface composition has been studied. Indium oxide as main secondary phase in surface region of KCN-etched films is probably responsible of high surface conductivity and failure to prepare substrate configuration solar cell. Oxygen bounded to metal is present in the film bulk revealed by Ols BE of 530.0 eV of Ar<sup>+</sup>
 sputtered profile. Hydrogen sulfide treatment transforms indium oxide into indium sulfide. Etching in ammonium persulfate solution has found to be effective to remove conductive upper layer resulting in surface with composition Cu:In:S=28.3:22.5:49.3. According to XPS, sprayed films show phase composition grading from the film surface to depth.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Surface analysis of spray deposited copper indium disulfide films</s1>
</fA08>
<fA09 i1="01" i2="1" l="FRE"><s1>Proceedings on Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference, Strasbourg, France</s1>
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<fA11 i1="01" i2="1"><s1>KATERSKI (Atanas)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MERE (Arvo)</s1>
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<fA11 i1="03" i2="1"><s1>KAZLAUSKIENE (Vida)</s1>
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<fA11 i1="04" i2="1"><s1>MISKINIS (Juozas)</s1>
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<fA11 i1="05" i2="1"><s1>SAAR (Agu)</s1>
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<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>KROON (J.)</s1>
<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>SLAOUI (A.)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
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<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
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<fA14 i1="02"><s1>Institute of Materials Science and Applied Research, Vilnius University, Naugarduko Str. 24</s1>
<s2>2006 Vilnius</s2>
<s3>LTU</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="03"><s1>Institute of Physics, University of Tartu, Riia 142</s1>
<s2>Tartu 51014</s2>
<s3>EST</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<s3>AUT</s3>
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<sZ>2 aut.</sZ>
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<fA15 i1="03"><s1>ECN</s1>
<s3>NLD</s3>
<sZ>3 aut.</sZ>
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<fA15 i1="04"><s1>InESS-CNRS</s1>
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<s3>FRA</s3>
<sZ>4 aut.</sZ>
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<fA47 i1="01" i2="1"><s0>08-0462941</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>CuInS<sub>2</sub>
 films were deposited by spray pyrolysis method at 350 °C. Films were characterized by XPS, AFM and electrical resistivity. The effect of chemical etchings in KCN and (NH<sub>4</sub>
)<sub>2</sub>
S<sub>2</sub>
O<sub>8</sub>
 solutions and thermal treatment at 530 °C in flowing hydrogen sulphide on the film surface composition has been studied. Indium oxide as main secondary phase in surface region of KCN-etched films is probably responsible of high surface conductivity and failure to prepare substrate configuration solar cell. Oxygen bounded to metal is present in the film bulk revealed by Ols BE of 530.0 eV of Ar<sup>+</sup>
 sputtered profile. Hydrogen sulfide treatment transforms indium oxide into indium sulfide. Etching in ammonium persulfate solution has found to be effective to remove conductive upper layer resulting in surface with composition Cu:In:S=28.3:22.5:49.3. According to XPS, sprayed films show phase composition grading from the film surface to depth.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H55N</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70C25</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Analyse surface</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Surface analysis</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Cellule solaire</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Solar cells</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Pyrolyse</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Pyrolysis</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Microscopie force atomique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Atomic force microscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Attaque chimique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Chemical etching</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Ataque químico</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Composition phase</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Phase composition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Composición fase</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composition surface</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Surface composition</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Conductivité superficielle</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Surface conductivity</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Sputter deposition</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Sulfure de cuivre</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Sulfure d'hydrogène</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Hydrogen sulfides</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Gravure</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Etching</s0>
<s5>30</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>CuInS2</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>6855N</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7325</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>301</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="FRE"><s1>Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference</s1>
<s3>Strasbourg FRA</s3>
<s4>2007-06</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Surface analysis of spray deposited copper indium disulfide films
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Surface analysis of spray deposited copper indium disulfide films

Surface analysis of spray deposited copper indium disulfide films

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